document number: 88789 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 18-mar-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 dual common-cathode schottky rectifier high barrier technology for improv ed high temperature performance mbr(f,b)25h35ct thru mbr(f,b)25h60ct vishay general semiconductor new product features ? guardring for overvoltage protection ? lower power losses, high efficiency ? low forward voltage drop ? low leakage current ? high forward surge capability ? high frequency operation ? meets msl level 1, per j-std-020, lf maximum peak of 245 c (for to-263ab package) ? solder dip 260 c, 40 s (for to-220ab and ito-220ab package) ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in low voltage, high frequency rectifier of switching mode power supplies, free wheeling diodes, dc-to-dc converters or polarity protection application. mechanical data case: to-220ab, ito-220ab, to-263ab molding compound meets ul 94 v-0 flammabi lity rating terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec-q101 qualified), meets jesd 201 class 2 whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 15 a v rrm 35 v to 60 v i fsm 150 a v f 0.54 v, 0.60 v i r 100 a t j max. 175 c to-263ab case pin 2 pin 1 pin 3 to-220ab mbr25hxxct ito-220ab mbrb25hxxct pin 1 pin 2 k heatsink 1 2 3 1 2 k mbrf25hxxct pin 2 pin 1 pin 3 1 2 3 maximum ratings (t c = 25 c unless otherwise noted) parameter symbol mbr25h35ct mbr25h45ct mbr25h50ct mbr25h60ct unit maximum repetitive pe ak reverse voltage v rrm 35 45 50 60 v working peak reverse voltage v rwm 35 45 50 60 v maximum dc blocking voltage v dc 35 45 50 60 v max. average forward rectified current (fig. 1) total device i f(av) 30 a per diode 15 non-repetitive avalanche energy per diode at 25 c, i as = 4 a, l = 10 mh e as 80 mj peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 150 a peak repetitive reverse surge current per diode at t p = 2.0 s, 1 khz i rrm 1.0 0.5 a peak non-repetiti ve reverse energy (8/20 s waveform) e rsm 25 20 mj
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88789 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 18-mar-10 mbr(f,b)25h35ct thru mbr(f,b)25h60ct vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms note (1) aec-q101 qualified electrostatic discharge capacitor voltage human body model: c = 100 pf, r = 1.5 k v c 25 kv voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 65 to + 175 c isolation voltage (ito-220ab only) from terminal to heatsink t = 1 min v ac 1500 v electrical characteristics (t c = 25 c unless otherwise noted) parameter test conditions symbol mbr25h35ct mbr25h45ct mbr25h50ct mbr25h60ct unit typ. max. typ. max. maximum instantaneous forward voltage per diode i f = 15 a t j = 25 c v f (1) - 0.64 - 0.70 v t j = 125 c 0.50 0.54 0.56 0.60 i f = 30 a t j = 25 c - 0.74 - 0.85 t j = 125 c 0.63 0.67 0.68 0.72 maximum reverse current at rated v r per diode t j = 25 c i r (2) - 100 - 100 a t j = 125 c 6.0 20 4.0 20 ma thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol mbr mbrf mbrb unit thermal resistance, junction to case per diode r jc 1.5 4.5 1.5 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ab mbr25h45ct-e3/45 1.85 45 50/tube tube ito-220ab mbrf25h45ct-e3/45 1.99 45 50/tube tube to-263ab mbrb25h45ct-e3/45 1.35 45 50/tube tube to-263ab mbrb25h45ct-e3/81 1.35 81 800/reel tape and reel to-220ab mbr25h45cthe3/45 (1) 1.85 45 50/tube tube ito-220ab mbrf25h45cthe3/45 (1) 1.99 45 50/tube tube to-263ab mbrb25h45cthe3/45 (1) 1.35 45 50/tube tube to-263ab mbrb25h45cthe3/81 (1) 1.35 81 800/reel tape and reel maximum ratings (t c = 25 c unless otherwise noted) parameter symbol mbr25h35ct mbr 25h45ct mbr25h50ct mbr25h60ct unit
document number: 88789 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 18-mar-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 mbr(f,b)25h35ct thru mbr(f,b)25h60ct vishay general semiconductor new product ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward derating curve (total) fig. 2 - maximum non-re petitive peak forward surge current per diode fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical transient thermal impedance per diode 0 10 20 30 40 25 0 50 75 100 125 150 175 mbrf mbr, mbrb average forwar d current (a) ca s e temperature (c) 1 100 0 25 50 75 100 125 150 10 number of cycle s at 60 hz peak forwar d s urge current (a) t j = t j max. 8.3 m s s ingle half s ine-wave 0.01 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 10 100 t j = 150 c t j = 125 c t j = 25 c in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) mbr25h35ct, mbr25h45ct mbr25h50ct, mbr25h60ct 60 040 20 100 80 0.0001 0.001 0.1 0.01 1 10 100 t j = 150 c t j = 125 c t j = 25 c percent of rated peak rever s e voltage (%) in s tantaneou s rever s e leakage current (ma) mbr25h35ct, mbr25h45ct mbr25h50ct, mbr25h60ct 0.1 1 100 10 1000 100 10 000 rever s e voltage (v) junction cap acitance (p f) mbr25h35ct, mbr25h45ct mbr25h50ct, mbr25h60ct t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.01 0.1 0.1 1 1 10 10 t - pul s e duration ( s ) tran s ient thermal impedance (c/w)
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88789 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 18-mar-10 mbr(f,b)25h35ct thru mbr(f,b)25h60ct vishay general semiconductor new product package outline dimensions in inches (millimeters) to-220ab 0.113 (2.87) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15.87) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.154 (3.91) 0.148 (3.74) 1 3 2 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4.85) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.08) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4.83) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 (8.89) 0.330 (8.38) to-263ab mounting pad layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.08 (2.032) mi n . 0.15 (3.81) mi n . 0.33 (8.38) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4.83) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 (8.13) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) mi n .
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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